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IGBT onsemi AFGHL75T65SQDC 650 Volt 75 Amp with 4th Generation Field Stop and High Current Capability

Categories	Single IGBTs
Td(off):	107ns
Pd - Power Dissipation:	375W
Td(on):	24ns
Collector-Emitter Breakdown Voltage (Vces):	650V
Reverse Transfer Capacitance (Cres):	11.2pF
IGBT Type:	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):	3.4V@75mA
Gate Charge(Qg):	139nC@15V
Operating Temperature:	-55℃~+175℃@(Tj)
Switching Energy(Eoff):	1.11mJ
Turn-On Energy (Eon):	1.68mJ
Input Capacitance(Cies):	4.574nF
Pulsed Current- Forward(Ifm):	200A
Output Capacitance(Coes):	289.4pF
Description:	375W 650V FS (Field Stop) TO-247-3L Single IGBTs RoHS
Mfr. Part #:	AFGHL75T65SQDC
Model Number:	AFGHL75T65SQDC
Package:	TO-247-3L

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Hefei Purple Horn E-Commerce Co., Ltd.

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Product Details
Company Profile

IGBT onsemi AFGHL75T65SQDC 650 Volt 75 Amp with 4th Generation Field Stop and High Current Capability

Product Overview

The AFGHL75T65SQDC is a 650 V, 75 A IGBT featuring novel field stop 4th generation IGBT technology and 1.5th generation SiC Schottky Diode technology. It offers optimal performance with low conduction and switching losses, making it ideal for high-efficiency operations in applications such as totem pole bridgeless PFC and Inverter. Its features include a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, and low saturation voltage.

Product Attributes

Brand: onsemi (Semiconductor Components Industries, LLC)
Certifications: AECQ101 Qualified and PPAP Capable

Technical Specifications

Rating	Symbol	Value Unit	Conditions
Collector-to-Emitter Voltage	VCES	650 V
Gate-to-Emitter Voltage	VGES	20 V
Transient Gate-to-Emitter Voltage		30 V
Collector Current	IC	80 A	@ TC = 25C
Collector Current	IC	75 A	@ TC = 100C
Pulsed Collector Current	ILM	300 A	(Note 2)
Pulsed Collector Current	ICM	300 A	(Note 3)
Diode Forward Current	IF	35 A	@ TC = 25C
Diode Forward Current	IF	20 A	@ TC = 100C
Pulsed Diode Maximum Forward Current	IFM	200 A
Maximum Power Dissipation	PD	375 W	@ TC = 25C
Maximum Power Dissipation	PD	188 W	@ TC = 100C
Operating Junction / Storage Temperature Range	TJ, TSTG	55 to +175 C
Maximum Lead Temp. for Soldering Purposes	TL	265 C	1/8 from case for 10 seconds
Collector-emitter breakdown voltage	BVCES	650 V	VGE = 0 V, IC = 1 mA
Temperature Coefficient of Breakdown Voltage	BVCES / TJ	0.6 V/C	VGE = 0 V, IC = 1 mA
Collector-emitter cut-off current	ICES	250 A	VGE = 0 V, VCE = 650 V
Gate leakage current	IGES	400 nA	VGE = 20 V, VCE = 0 V
Gate-emitter threshold voltage	VGE(th)	3.4 - 6.4 V	VGE = VCE, IC = 75 mA
Collector-emitter saturation voltage	VCE(sat)	1.6 V (Typ.)	VGE = 15 V, IC = 75 A
Collector-emitter saturation voltage	VCE(sat)	2.0 - 2.1 V	VGE = 15 V, IC = 75 A, TJ = 175C
Input capacitance	Cies	4574 pF (Typ.)	VCE = 30 V, VGE = 0 V, f = 1 MHz
Output capacitance	Coes	289.4 pF (Typ.)	VCE = 30 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance	Cres	11.2 pF (Typ.)	VCE = 30 V, VGE = 0 V, f = 1 MHz
Gate charge total	Qg	139 nC (Typ.)	VCE = 400 V, IC = 75 A, VGE = 15 V
Gate-to-emitter charge	Qge	25 nC (Typ.)	VCE = 400 V, IC = 75 A, VGE = 15 V
Gate-to-collector charge	Qgc	33 nC (Typ.)	VCE = 400 V, IC = 75 A, VGE = 15 V
Turn-on delay time	td(on)	22.4 ns (Typ.)	TC = 25C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V
Rise time	tr	19.2 ns (Typ.)	TC = 25C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V
Turn-off delay time	td(off)	116.8 ns (Typ.)	TC = 25C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V
Fall time	tf	9.6 ns (Typ.)	TC = 25C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V
Turn-on switching loss	Eon	0.48 mJ (Typ.)	TC = 25C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V
Turn-off switching loss	Eoff	0.24 mJ (Typ.)	TC = 25C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V
Total switching loss	Ets	0.72 mJ (Typ.)	TC = 25C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V
Turn-on delay time	td(on)	24 ns (Typ.)	TC = 25C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V
Rise time	tr	49.6 ns (Typ.)	TC = 25C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V
Turn-off delay time	td(off)	107.2 ns (Typ.)	TC = 25C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V
Fall time	tf	70.4 ns (Typ.)	TC = 25C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V
Turn-on switching loss	Eon	1.68 mJ (Typ.)	TC = 25C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V
Turn-off switching loss	Eoff	1.11 mJ (Typ.)	TC = 25C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V
Total switching loss	Ets	2.79 mJ (Typ.)	TC = 25C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V
Turn-on delay time	td(on)	20.8 ns (Typ.)	TC = 175C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V
Rise time	tr	22.4 ns (Typ.)	TC = 175C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V
Turn-off delay time	td(off)	130 ns (Typ.)	TC = 175C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V
Fall time	tf	9.6 ns (Typ.)	TC = 175C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V
Turn-on switching loss	Eon	0.53 mJ (Typ.)	TC = 175C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V
Turn-off switching loss	Eoff	0.44 mJ (Typ.)	TC = 175C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V
Total switching loss	Ets	0.98 mJ (Typ.)	TC = 175C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V
Turn-on delay time	td(on)	24 ns (Typ.)	TC = 175C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V
Rise time	tr	49.6 ns (Typ.)	TC = 175C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V
Turn-off delay time	td(off)	118 ns (Typ.)	TC = 175C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V
Fall time	tf	78.4 ns (Typ.)	TC = 175C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V
Turn-on switching loss	Eon	1.76 mJ (Typ.)	TC = 175C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V
Turn-off switching loss	Eoff	1.42 mJ (Typ.)	TC = 175C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V
Total switching loss	Ets	3.19 mJ (Typ.)	TC = 175C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V
Forward Voltage	VF	1.45 - 1.75 V	IF = 20 A
Forward Voltage	VF	1.80 V (Typ.)	IF = 20 A, TJ = 175C
Total Capacitance	C	110 pF (Typ.)	VR = 400 V, f = 1 MHz
Total Capacitance	C	105 pF (Typ.)	VR = 600 V, f = 1 MHz
Thermal resistance junction-to-case (IGBT)	R JC	0.4 C/W
Thermal resistance junction-to-case (Diode)	R JC	1.55 C/W
Thermal resistance junction-to-ambient	R JA	40 C/W

2410010101_onsemi-AFGHL75T65SQDC_C2902241.pdf

IGBT onsemi AFGHL75T65SQDC 650 Volt 75 Amp with 4th Generation Field Stop and High Current Capability

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