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Categories | MOSFET Power Electronics |
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Brand Name: | Infineon |
Model Number: | IRFR3607TRPBF |
Place of Origin: | original |
MOQ: | 1 |
Price: | Negotiable |
Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
Supply Ability: | 999999 |
Delivery Time: | 1-3 days |
Packaging Details: | standard |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 75 V |
Current - Continuous Drain (Id) @ 25°C: | 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 9mOhm @ 46A, 10V |
IRFR3607TRPBF MOSFET Power Electronics N-Channel Enhanced body diode dV dt and dI dt Package TO-252
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 9mOhm @ 46A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 100µA | |
Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 3070 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 140W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | D-Pak | |
Package / Case |
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits Benefits
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt
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