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High Purity Thin Sapphire Wafer Sapphire Single Crystal 0.7mm Thickness

Categories Sapphire Substrate
Brand Name: zmkj
Model Number: r-axis carrier sapphire wafer
Place of Origin: china
MOQ: 10pcs
Price: by case
Payment Terms: T/T, Western Union, MoneyGram
Supply Ability: 1000pcs per month
Delivery Time: 3-5weeks
Packaging Details: in 25pcs cassette wafer box under 100grade cleaning room
material: sapphire single crystal
orientation: R-axis
surface: ssp or dsp
thickness: 0.7mm
application: carrier
growth method: ky
TTV: <3um
size: 4.125inch/6.125inch/6inch/8inch
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    High Purity Thin Sapphire Wafer Sapphire Single Crystal 0.7mm Thickness

    2inch /3inch 4inch /5inch C-axis/ a-axis/ r-axis/ m-axis 6"/6inch dia150mm C-plane Sapphire SSP/DSP wafers with 650um/1000um Thickness

    TTV<3um 4.125inch/6inch/6.125inch/dia159mm R-axis sapphire Carrier wafers for SOS GaAs epitaxy

    About synthetic sapphire crystal

    The Kyropoulos process (KY process) for sapphire crystal growth is currently used by many companies in China to produce sapphire for the electronics and optics industries.
    High-purity, aluminum oxide is melted in a crucible at over 2100 degrees Celsius. Typically the crucible is made of tungsten or molybdenum. A precisely oriented seed crystal is dipped into the molten alumina. The seed crystal is slowly pulled upwards and may be rotated simultaneously. By precisely controlling the temperature gradients, rate of pulling and rate of temperature decrease, it is possible to produce a large, single-crystal, roughly cylindrical ingot from the melt.
    After single crystal sapphire boules are grown, they are core-drilled into cylindrical rods, The rods are sliced up into the desired window thickness and finally polished to the desired surface finish.

    Use as substrate for semiconducting circuits
    Thin sapphire wafers were the first successful use of an insulating substrate upon which to deposit silicon to make the integrated circuits known as silicon on sapphire or "SOS", Besides its excellent electrical insulating properties, sapphire has high thermal conductivity. CMOS chips on sapphire are especially useful for high-power radio-frequency (RF) applications such as those found in cellular telephones, public-safety band radios, and satellite communication systems.
    Wafers of single-crystal sapphire are also used in the semiconductor industry as substrates for the growth of devices based on gallium nitride (GaN). The use of sapphire significantly reduces the cost, because it has about one-seventh the cost of germanium. Gallium nitride on sapphire is commonly used in blue light-emitting diodes (LEDs).


    Used as a window material
    Synthetic sapphire (sometimes referred to as sapphire glass) is commonly used as a window material, because it is both highly transparent to wavelengths of light between 150 nm (UV) and 5500 nm (IR) (the visible spectrum extends about 380 nm to 750 nm, and extraordinarily scratch-resistant. The key benefits of sapphire windows are:
    * Very wide optical transmission band from UV to near-infrared
    * Significantly stronger than other optical materials or glass windows
    * Highly resistant to scratching and abrasion (9 on the Mohs scale of mineral hardness scale, the 3rd hardest natural substance next to moissanite and diamonds)
    * Extremely high melting temperature (2030 °C)


    Sapphire Properties

    GENERAL
    Chemical Formula
    Al2O3
    Crystal Stucture
    Hexagonal System ((hk o 1)
    Unit Cell Dimension
    a=4.758 Å,Å c=12.991 Å, c:a=2.730
    PHYSICAL
    Metric
    English (Imperial)
    Density
    3.98 g/cc
    0.144 lb/in3
    Hardness
    1525 - 2000 Knoop, 9 mhos
    3700° F
    Melting Point
    2310 K (2040° C)
    STRUCTURAL
    Tensile Strength
    275 MPa to 400 MPa
    40,000 to 58,000 psi
    at 20°
    400 MPa
    58,000 psi (design min.)
    at 500° C
    275 MPa
    40,000 psi (design min.)
    at 1000° C
    355 MPa
    52,000 psi (design min.)
    Flexural Stength
    480 MPa to 895 MPa
    70,000 to 130,000 psi
    Compression Strength
    2.0 GPa (ultimate)
    300,000 psi (ultimate)

    CATALOGU & Stcok List

    Standard wafer

    2 inch C-plane sapphire wafer SSP/DSP
    3 inch C-plane sapphire wafer SSP/DSP
    4 inch C-plane sapphire wafer SSP/DSP
    6 inch C-plane sapphire wafer SSP/DSP
    Special Cut
    A-plane (1120) sapphire wafer
    R-plane (1102) sapphire wafer
    M-plane (1010) sapphire wafer
    N-plane (1123) sapphire wafer
    C-axis with a 0.5°~ 4° offcut, toward A-axis or M-axis
    Other customized orientation
    Customized Size
    10*10mm sapphire wafer
    20*20mm sapphire wafer
    Ultra thin (100um) sapphire wafer
    8 inch sapphire wafer

    Patterned Sapphire Substrate (PSS)
    2 inch C-plane PSS
    4 inch C-plane PSS

    2inch

    DSP C-AXIS 0.1mm/ 0.175mm/0.2mm/0.3mm/0.4mm/0.5mm/1.0mmt

    SSP C-axis 0.2/0.43mm

    (DSP&SSP) A-axis/M-axis/R-axis 0.43mm


    3inch

    DSP/ SSP C-axis 0.43mm/0.5mm


    4Inch

    dsp c-axis 0.4mm/ 0.5mm/1.0mm

    ssp c-axis 0.5mm/0.65mm/1.0mmt


    6inch

    ssp c-axis 1.0mm/1.3mmm


    dsp c-axis 0.65mm/ 0.8mm/1.0mmt



    ItemParameterSpecUnit
    1Product NameSapphire Wafer (Al2O3)
    2Diameter2”4”6”mm
    3Thickness430± 25650± 251000 ± 25μm
    4Surface OrientationC-Plane (0001) tilted M-axis 0.2°/0.35°± 0.1°degree
    5Primary FlatA-Axis (11-20) ± 0.2°degree
    Orientation Length16 ± 0.531 ± 1.047.5 ± 2.0mm
    6TTV< 10< 10< 25μm
    7Bow-10 ~ 0-15 ~ 0-30 ~ 0μm
    8Warp102030μm
    9Roughness Front Side0.50.50.5nm
    10Roughness Back Side1.0 ± 0.3μm
    11Wafer EdgeR-Type or T-Type
    12Laser MarkCustomize

    OUR FACTORY


    Payment / Shipping

    Q: What's the way of shipping and cost?


    (1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.

    (2) If you have your own express number, it's great.

    (3) Freight=USD35.0(the first weight) + USD12.0/kg


    Q: How to pay?


    (1) T/T, PayPal, West Union, MoneyGram and

    Assurance payment on Alibaba and etc..

    (2) Bank Fee: West Union-USD30.00(≤USD3000.00),

    T/T-USD20.00+, PayPal-5%. Please consult the local bank.


    Q: What's the deliver time?


    (1) For inventory: the delivery time is 5 workdays.
    (2) For customized products: the delivery time is 7 to 25 workdays. According to the quantity.


    Q: Can I customize the products based on my need?


    Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.


    Product Tags:

    sapphire wafer

      

    silicon substrate

      
    Quality High Purity Thin Sapphire Wafer Sapphire Single Crystal 0.7mm Thickness for sale
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